INTERLAYER INSULATING LAYER FORMATION METHOD AND SEMICONDUCTOR DEVICE
摘要
<p>Provided are: an interlayer insulating layer formation method which enables the formation of an interlayer insulating layer having excellent mechanical strength and moisture absorption resistance and a low dielectric constant; and a semiconductor device having reduced wiring delay. A method for forming an interlayer insulating layer for a semiconductor device by a plasma CVD method comprises the steps of: installing a substrate to a treatment vessel having reduced pressure; supplying a plasma generation gas to a first space (1a) placed apart from the substrate; exciting the plasma generation gas in the first space (1a); and supplying a raw material gas comprising a boron compound having at least a hydrogen group or a hydrocarbon group to a second space (1b) formed between the first space (1a) and the substrate. A semiconductor device wherein multilayer interconnection is achieved through an interlayer insulating layer having an amorphous structure containing boron, carbon and nitrogen formed therein, and wherein a hydrocarbon group or an alkylamino group is allowed to co-exist in an amorphous structure containing hexagonal and cubic boron nitride in the interlayer insulating layer.</p>
申请公布号
WO2012011480(A1)
申请公布日期
2012.01.26
申请号
WO2011JP66395
申请日期
2011.07.20
申请人
TOKYO ELECTRON LIMITED;MIYATANI, KOTARO;NEMOTO, TAKENAO;KUROTORI, TAKUYA;KOBAYASHI, YASUO;NOZAWA, TOSHIHISA