发明名称 |
Polysilicon Plug Bipolar Transistor For Phase Change Memory |
摘要 |
Memory devices and methods for manufacturing are described herein. A memory device described herein includes a plurality of memory cells. Memory cells in the plurality of memory cells comprise respective bipolar junction transistors and memory elements. The bipolar junction transistors are arranged in a common collector configuration and include an emitter comprising doped polysilicon having a first conductivity type, the emitter contacting a corresponding word line in a plurality of word lines to define a pn junction. The bipolar junction transistors include a portion of the corresponding word line underlying the emitter acting as a base, and a collector comprising a portion of the single-crystalline substrate underlying the base. |
申请公布号 |
US2012018845(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113252152 |
申请日期 |
2011.10.03 |
申请人 |
LUNG HSIANG-LAN;LAI ERH-KUN;RAJENDRAN BIPIN;LAM CHUNG H.;INTERNATIONAL BUSINESS MACHINES CORPORATION;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN;LAI ERH-KUN;RAJENDRAN BIPIN;LAM CHUNG H. |
分类号 |
H01L29/73 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|