发明名称 SEMICONDUCTOR DEVICE
摘要 CMOS inverters are included in a standard cell. Power supply lines are electrically connected to CMOS inverters, and include lower layer interconnects and upper layer interconnect. Lower layer interconnects extend along a boundary of standard cells adjacent to each other and on the boundary. Upper layer interconnects are positioned more inside in standard cell than lower layer interconnects, as viewed from a plane. CMOS inverters are electrically connected through upper layer interconnects to lower layer interconnects. Thus, a semiconductor device is obtained that can achieve both higher speeds and higher integration.
申请公布号 US2012018839(A1) 申请公布日期 2012.01.26
申请号 US201113248965 申请日期 2011.09.29
申请人 TSUDA NOBUHIRO;RENESAS ELECTRONICS CORPORATION 发明人 TSUDA NOBUHIRO
分类号 H01L27/10 主分类号 H01L27/10
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