| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a nitride single crystal by which a crystal of high quality and high purity is prepared at a more rapid crystal growth rate, and to provide the nitride single crystal, a substrate and a device. <P>SOLUTION: A raw material including an element of group III, a mineralizer having a composition including MeX<SP POS="POST">1</SP><SB POS="POST">n</SB>(here, Me is B, Al, Ga, or In, X<SP POS="POST">1</SP>is F, Cl, Br, or I, and n is an integer of 1-3), ammonia, and a seed crystal 32 composed of a nitride of an element of group III are put into a reaction vessel 11. The nitride single crystal is grown on a surface of the seed crystal 32 inside the reaction vessel 11 at a temperature of 460-600°C and a pressure of 80-150 MPa by an ammonothermal method. Inner wall surface 11b of the reaction vessel 11 is covered with a lining or a coating of Pt, Ir, Au, Ti, V, Zr, Nb, Ta, W, or an alloy composed of two or more kinds of these elements. <P>COPYRIGHT: (C)2012,JPO&INPIT |
