发明名称 |
PLASMA PROCESSING METHOD AND STORAGE MEDIUM |
摘要 |
There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio. |
申请公布号 |
US2012021538(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113189715 |
申请日期 |
2011.07.25 |
申请人 |
LEE SUNG TAE;DOBASHI KAZUYA;TOKYO ELECTRON LIMITED |
发明人 |
LEE SUNG TAE;DOBASHI KAZUYA |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|