| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element using a piezoelectric thin film of an alkali niobium oxide compound having piezoelectric characteristics that can be substituted for the current PZT thin films; and a piezoelectric thin film device. <P>SOLUTION: In a piezoelectric thin film element having a piezoelectric thin film on a substrate, the piezoelectric thin film has a perovskite structure of an alkali niobium oxide compound represented by a general formula (K<SB POS="POST">1-x</SB>Na<SB POS="POST">x</SB>)<SB POS="POST">y</SB>NbO<SB POS="POST">3</SB>(0<x<1), a composition of the alkali niobium oxide compound is in the ranges of 0.40≤x≤0.70 and 0.77≤y≤0.90, and a ratio between a lattice constant (c) in the direction to the outside of a plane and a lattice constant (a) in the direction to the inside of the plane of the (K<SB POS="POST">1-x</SB>Na<SB POS="POST">x</SB>)<SB POS="POST">y</SB>NbO<SB POS="POST">3</SB>thin film is in the range of 0.985≤c/a≤1.008. <P>COPYRIGHT: (C)2012,JPO&INPIT |
