| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state imaging device which can minimize generation of a dark current or a leak current. <P>SOLUTION: The solid state imaging device comprises a first substrate having a principal surface on which a photoelectric conversion element is arranged, a first wiring structure having a first joint including a conductor, a second substrate having a principal surface on which a part of the peripheral circuit is arranged, and a second wiring structure having a second joint including a conductor. The first joint and the second joint are joined so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are arranged in this order. The conductor at the first joint and the conductor at the second joint are surrounded by a diffusion barrier for the conductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
