发明名称 |
METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE |
摘要 |
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm−2, which will find important applications in future electronic and optoelectronic devices. |
申请公布号 |
US2012018699(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113112315 |
申请日期 |
2011.05.20 |
申请人 |
CHUA SOO JIN;ZHOU HAILONG;LIN JIANYI;PAN HUI;NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
CHUA SOO JIN;ZHOU HAILONG;LIN JIANYI;PAN HUI |
分类号 |
H01L33/26;H01L21/20;H01L29/267;H01L29/66;H01L33/00 |
主分类号 |
H01L33/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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