LOW-TEMPERATURE FORMING METHOD OF GRAPHENE, AND DIRECT TRANSFER OF GRAPHENE AND GRAPHENE SHEET USING THE SAME

摘要

PURPOSE: A low-temperature-based graphene manufacturing method, a direct graphene transferring method using the same, and a graphene sheet are provided to easily manufacture large sized-graphene at a low temperature lower than 500 degrees Celsius based on the inductively coupled plasma-chemical vapor deposition. CONSTITUTION: A substrate is loaded into an inductively coupled plasma-chemical vapor deposition chamber(15) using a loading-locking chamber. A carbon source is supplied into the chamber. Graphene is formed at a temperature lower than 500 degrees Celsius based on the inductively coupled plasma-chemical vapor deposition. The substrate further includes a graphene growing metal catalyst layer. The formation of the graphene is implemented on the upper side of the graphene growing metal catalyst layer based on a roll-to-roll process. The graphene growing metal catalyst layer is eliminated to directly transfer the graphene on the substrate.