| 摘要 |
A method of processing sodium doping for thin-film photovoltaic material includes forming a metallic electrode on a substrate. A sputter deposition using a first target device comprising 4-12 wt% Na 2 SeO 3 and 88-96 wt% copper-gallium species is used to form a first precursor with a first Cu/Ga composition ratio. A second precursor over the first precursor has copper species and gallium species deposited using a second target device with a second Cu/Ga composition ratio substantially equal to the first Cu/Ga composition ratio. A third precursor comprising indium material overlies the second precursor. The precursor layers are subjected to a thermal reaction with at least selenium species to cause formation of an absorber material comprising sodium species and a copper to indium-gallium atomic ratio of about 0.9. |
