VALVE LIFTER AND METHOD FOR SURFACE TREATMENT THEREOF

摘要

PURPOSE: A valve lifter and a surface treatment method thereof are provided to control the content of Si by controlling cathode power applied to a SiC target. CONSTITUTION: A valve lifter comprises a boundary layer, a Me-Diamond-Like Carbon layer, and a Si-DLC layer. The boundary layer is formed by sputtering a metal target on the surface of a carburized base material. The Me-DLC layer is formed on the boundary layer by sputtering one of W, Cr, Ti, and Mo. The Si-DLC layer is formed on the Me-DLC layer. The thickness of the Me-DLC layer is 0.3-1.0 micrometers, and the thickness of the Si-DLC layer is 1.0-2.0 micrometers.