| 摘要 |
The present invention relates to a method of forming a micro pattern of a semiconductor device. According to an aspect of the present invention, a first photoresist layer and a second photoresist layer with different exposure types are formed over a semiconductor substrate on which an etch target layer is formed, performing an exposure process on the second photoresist layer and the first photoresist layer. Second photoresist patterns are formed by developing the second photoresist layer. First photoresist patterns are formed by etching the first photoresist layer using an etch process employing the second photoresist patterns as an etch mask. Auxiliary patterns are formed by developing the first photoresist patterns. The etch target layer is etched by employing the auxiliary patterns. |
