发明名称 Carrying structure of semiconductor
摘要 A carrying structure of semiconductor includes a carrier made of a plastic material with a heat conduction region, each surface of the carrier has an interface layer formed on, and an electrically insulation circuit and a metal layer are defined on the interface layer. The insulation circuit is located on the surface of the heat conduction region and on an encircling annular region extended from two surfaces of the heat conduction region, and at the same time exposing parts of the carrier surface thereby splitting the metal layer on the interface layer into at least two electrodes. A thermal conductor formed in the heat conduction region has a LED chip adhered on it which has at least a contact point connected with the corresponding metal layer with a metal wiring so as to dissipate the heat generated by the chip rapidly with the thermal conductor.
申请公布号 US8101962(B2) 申请公布日期 2012.01.24
申请号 US20090574223 申请日期 2009.10.06
申请人 CHIANG CHENG-FENG;KUANG HONG PRECISION CO., LTD. 发明人 CHIANG CHENG-FENG
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
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