发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A METALLISATION LAYER |
摘要 |
A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.
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申请公布号 |
US2012013029(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US20100837189 |
申请日期 |
2010.07.15 |
申请人 |
ZELSACHER RUDOLF;GANITZER PAUL;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
ZELSACHER RUDOLF;GANITZER PAUL |
分类号 |
H01L23/488;H01L21/50;H01L21/78 |
主分类号 |
H01L23/488 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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