| 摘要 |
A light emitting diode includes a first grid layer on a substrate and made of a metal material; a p-n semiconductor multiple-layered film on the first grid layer; and a second grid layer on the p-n semiconductor multiple-layered film and made of a metal material, wherein the first grid layer includes a base layer, and a plurality of first grid wires that protrudes from the base layer and are along a first direction, wherein the second grid layer includes a plurality of second grid wires along a second direction, and wherein the p-n semiconductor multiple-layered film includes an active layer, a n type semiconductor layer between the first grid layer and the active layer, and a p type semiconductor layer between the second grid layer and the active layer.
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