CHARGED PARTICLE BEAM DEVICE

摘要

Recently, size reduction and high integration are progressing in semiconductor manufacturing processes, so cases are increasing in which sites to be reviewed are closely spaced. The problem in such cases is that if a review is performed by using a conventional pre-charging technique, scans by a pre-charging electron beam are overlapped and a charged voltage on the surface of a sample exceeds a dielectric breakdown voltage, causing dielectric breakdown in the region where the scans by the electron beam are overlapped. The purpose of the present invention is to provide a defect review method for reducing the risk of dielectric breakdown and also provide a charged particle beam device. When reviewing a sample using a pre-charging technique, a plurality of images are captured after performing a charging control process once. In addition, the sites to be reviewed in an overlapped pre-charging scan region are grouped into groups on each of which a charging control is performed once and the charging control process is executed on each of the groups, thereby reducing the risk of dielectric breakdown.