发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which reduces manufacturing cost, for example. <P>SOLUTION: The semiconductor device manufacturing method comprises the steps of bonding a semiconductor substrate on which a plurality of semiconductor elements are formed on a first main surface of a glass substrate having the first main surface and a second main surface, singulating regions among the plurality of semiconductor elements on the semiconductor substrate, with being supported by the glass substrate, forming scratches on at least one of the first main surface and the second main surface in regions corresponding to the regions among the plurality of semiconductor elements before or after the bonding step and before the singulating step, and breaking the regions on the glass substrate where the scratches are formed as to be singulated into a plurality of semiconductor devices after the singulating step. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012015309(A) 申请公布日期 2012.01.19
申请号 JP20100150122 申请日期 2010.06.30
申请人 TOSHIBA CORP 发明人 TAKANO EIJI
分类号 H01L21/301 主分类号 H01L21/301
代理机构 代理人
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