| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase-change memory, in a semiconductor device, capable of shortening time required for an operational test. <P>SOLUTION: A write circuit 10 writes a first data signal which is an input data signal representing a first logical level in each of memory banks BANK0-7 in series, and simultaneously writes a second data signal which is an input data signal representing a second logical level in each of the memory banks BANK0-7. A semiconductor device comprises a plurality of phase-change memory banks, and a write circuit that writes an input data signal representing a first logical level in each of memory banks in reset operation in series, and simultaneously writes an input data signal representing a second logical level in each of the memory banks in set operation. A test method comprises writing a first data signal which is an input data signal representing a first logical level in each of memory banks in series, and simultaneously writing a second data signal which is an input data signal representing a second logical level in each of the memory banks. <P>COPYRIGHT: (C)2012,JPO&INPIT |
