发明名称 |
METHOD FOR CASTING POLYCRYSTALLINE SILICON |
摘要 |
<p>Disclosed is a method for casting polycrystalline silicon used as a substrate material for solar cells that reduces the amount of metal carried in when supplying raw material to a crucible. Said method for casting polycrystalline silicon uses a bottomless cooling crucible and continuously casts polycrystalline silicon by electromagnetic induction. High-purity silicon with a maximum particle diameter of 40 mm, wherein 0% to 40% of the particles have a diameter 0.6 to 3 mm and 100% to 60% of the particles have a diameter greater than 3 mm and up to 40 mm, is used as the raw material. This reduces contamination by heavy metals and enables polycrystalline silicon used as substrate material for solar cells that can maintain a good conversion efficiency to be readily produced using an electromagnetic casting device that uses a simple and small raw material supply pipe.</p> |
申请公布号 |
WO2012008003(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
WO2010JP06919 |
申请日期 |
2010.11.26 |
申请人 |
SUMCO CORPORATION;YAGI, DAICHI;SUGIMURA, WATARU |
发明人 |
YAGI, DAICHI;SUGIMURA, WATARU |
分类号 |
C01B33/02;H01L31/04 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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地址 |
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