ELECTRIC FIELD-EFFECT TRANSISTOR

摘要

By forming an opening section (121.1), an insulator (130.1) is formed in at least part of a portion of the upper surface of a first semiconductor layer (110) which does not have a second semiconductor layer (120) formed there-above. A source electrode (S10) is formed in the opening section (121.1) so as to cover the insulator (130.1). The source electrode (S10) is formed so as to touch the interfaces between the first semiconductor layer (110) and the second semiconductor layer (120).