发明名称 |
NONVOLATILE STORAGE DEVICE AND PROCESS FOR PRODUCTION THEREOF |
摘要 |
<p>Provided is a nonvolatile storage device (10) which has a reduced initiation voltage and can have a low driving voltage. The nonvolatile storage device (10) comprises a semiconductor substrate (100), a first electrode layer (105) formed on the semiconductor substrate (100), an oxygen-deficient first tantalum oxide layer (106x) formed on the first electrode layer (105) and having a composition represented by TaOx (0.8 = x = 1.9), a second tantalum oxide layer (106y) formed on the first tantalum oxide layer (106x) and having a composition represented by TaOy (2.1 = y), and a second electrode layer (107) formed on the second tantalum oxide layer (106y), wherein the second tantalum oxide layer (106y) has a columnar structure composed of multiple columnar bodies.</p> |
申请公布号 |
WO2012008160(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
WO2011JP04022 |
申请日期 |
2011.07.13 |
申请人 |
PANASONIC CORPORATION;NINOMIYA, TAKEKI;FUJII, SATORU;HAYAKAWA, YUKIO;MIKAWA, TAKUMI |
发明人 |
NINOMIYA, TAKEKI;FUJII, SATORU;HAYAKAWA, YUKIO;MIKAWA, TAKUMI |
分类号 |
H01L27/105;H01L45/00;H01L49/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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