CHEMICAL-MECHANICAL POLISHING PAD AND CHEMICAL-MECHANICAL POLISHING METHOD

摘要

Disclosed is a chemical-mechanical polishing pad provided with a polishing layer, wherein recesses are disposed on the surface of the polishing layer for polishing. The polishing layer: has a surface layer section that contains at least the inner surfaces of the recesses; and is characterized in that the ratio (D1/D2) of the average opening ratio (D1) (%) in the inner surfaces of the recesses when the polishing layer is immersed in 23°C water for one hour to the average opening ratio (D2) (%) in a cross section when the cross section, defined by cutting the polishing layer in a plane that does not intersect with the surface layer section, is immersed in 23°C water for one hour is 0.01 to 0.5.