| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an electrode having a taper of a staircase structure with a good reproducibility by a simple method even when a metal having a columnar crystal structure is used. <P>SOLUTION: The method of manufacturing a thin film transistor includes: a film formation step in which at least two layers of metal films are formed by sputtering using one kind of metal while keeping a vacuum condition; and an etching step in which at least one of a gate electrode, a source electrode and a drain electrode, each having a taper form of a staircase structure at an end, is formed by etching the metal films formed by the film formation step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
