发明名称 |
PHOTOELECTRIC CONVERSION SEMICONDUCTOR LAYER, MANUFACTURING METHOD THEREOF, PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL |
摘要 |
A photoelectric conversion semiconductor layer having high photoelectric conversion efficiency is provided at a low cost. Photoelectric conversion semiconductor layer is a layer that generates a current by absorbing light and is formed of a particle layer in which a plurality of plate-like particles is disposed only in a plane direction or a sintered body thereof, or a particle layer in which a plurality of plate-like particles is disposed in a plane direction and a thickness direction or a sintered body thereof.
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申请公布号 |
US2012012182(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201013260195 |
申请日期 |
2010.03.19 |
申请人 |
SATOU TADANOBU;KIKUCHI MAKOTO;FUJIFILM CORPORATION |
发明人 |
SATOU TADANOBU;KIKUCHI MAKOTO |
分类号 |
H01L31/0264;H01L31/18 |
主分类号 |
H01L31/0264 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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