发明名称 PHOTOELECTRIC CONVERSION SEMICONDUCTOR LAYER, MANUFACTURING METHOD THEREOF, PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL
摘要 A photoelectric conversion semiconductor layer having high photoelectric conversion efficiency is provided at a low cost. Photoelectric conversion semiconductor layer is a layer that generates a current by absorbing light and is formed of a particle layer in which a plurality of plate-like particles is disposed only in a plane direction or a sintered body thereof, or a particle layer in which a plurality of plate-like particles is disposed in a plane direction and a thickness direction or a sintered body thereof.
申请公布号 US2012012182(A1) 申请公布日期 2012.01.19
申请号 US201013260195 申请日期 2010.03.19
申请人 SATOU TADANOBU;KIKUCHI MAKOTO;FUJIFILM CORPORATION 发明人 SATOU TADANOBU;KIKUCHI MAKOTO
分类号 H01L31/0264;H01L31/18 主分类号 H01L31/0264
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