| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage device capable of increasing writable frequency. <P>SOLUTION: The storage device includes: a storage layer which stores information based on a magnetization state of a magnetic material; a magnetization fixed layer whose magnetization direction is fixed through a tunnel insulating layer to the storage layer; a storage element 2 which makes a write current flow in the laminating direction of the storage layer and the magnetization fixed layer, and thereby changes the direction of magnetization of the storage layer to store information on the storage layer; and a cell array 5 in which this storage element 2 is arranged in an array state and is divided into a plurality of cell blocks 5a and 5b, and in which thermal stability of the storage layer of the storage element 2 is different for each of the cell blocks 5a and 5b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
