| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for inspecting a defect in a semiconductor single crystal, which has an enhanced sensitivity in defect evaluation of an inspection object by ultrasonic scattering method. <P>SOLUTION: In a method for inspecting a defect in a semiconductor single crystal by passing ultrasonic waves into a plate shaped semiconductor single crystal inspection object to determine presence or absence of a crystal defect in the inspection object based on the ultrasonic waves scattered or reflected in the inspection object, the incident ultrasonic waves to the inspection object have a wavelength of equal to or shorter than 60 μm or a frequency of equal to or higher than 78 MHz and form an angle between a direction perpendicular to a surface of the inspection object and an incident direction of the ultrasonic waves in the range from 10.0 degrees to 16.4 degrees. <P>COPYRIGHT: (C)2012,JPO&INPIT |
