发明名称
摘要 <p>A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the interface to create an etched zone. A second layer is then bonded to un-etched portions of the first layer to cover the etched zone and to form a closed cavity. The first layer is detached from the temporary support at the weak bond by providing a raised pressure in the cavity.</p>
申请公布号 JP4854958(B2) 申请公布日期 2012.01.18
申请号 JP20040502345 申请日期 2003.04.30
申请人 发明人
分类号 H01L21/02;H01L21/762;H01L27/12;H01L31/18;H01L33/00 主分类号 H01L21/02
代理机构 代理人
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