发明名称 |
PLASMA PROCESSING DEVICE |
摘要 |
The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container and improving the uniformity in the density distribution of the plasma, while preventing formation of particles or contamination of a base body due to the sputtering of the conductor of the radio-frequency antenna. A plasma processing device 10 according to the present invention is an inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container 11; an antenna-placing section 12 provided between an inner surface 111B and an outer surface 111A of a wall of the vacuum container 11; a radio-frequency antenna placed in the antenna-placing section 12, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member 15 separating the antenna-placing section 12 and an internal space 112 of the vacuum container, wherein the radio-frequency antenna 13 has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves. |
申请公布号 |
EP2408275(A1) |
申请公布日期 |
2012.01.18 |
申请号 |
EP20100750873 |
申请日期 |
2010.03.10 |
申请人 |
EMD CORPORATION;TOKYO ELECTRON LIMITED |
发明人 |
SETSUHARA, YUICHI;NISHIMURA, EIICHI;EBE, AKINORI |
分类号 |
H05H1/46;C23C16/505;H01J37/32;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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