| 发明名称 |
Method for an integrated circuit contact |
| 摘要 |
A support material for a semiconductor device is processed. An opening having a width is etched into the support material for the semiconductor device using a first etch mask. A portion of the opening is etched using a second etch mask without alignment thereof to the width of the opening.
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| 申请公布号 |
US8097514(B2) |
申请公布日期 |
2012.01.17 |
| 申请号 |
US20090565280 |
申请日期 |
2009.09.23 |
| 申请人 |
DENNISON CHARLES H.;DOAN TRUNG T.;ROUND ROCK RESEARCH, LLC |
发明人 |
DENNISON CHARLES H.;DOAN TRUNG T. |
| 分类号 |
H01L21/336;H01L21/768 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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