| 摘要 |
According to one embodiment, a control module of a nonvolatile semiconductor memory drive has a first erase mode in which an address management table, which is indicative of a correspondency between logical block addresses and physical addresses of a nonvolatile semiconductor memory, is initialized to set the memory area of the nonvolatile semiconductor memory in a state in which no user data is written, a second erase mode in which the address management table is initialized to set the memory area in a state in which no user data is written, and the blocks, other than a defective block, which are included in the memory area, are erased, and a third erase mode in which the address management table is initialized to set the memory area in a state in which no user data is written, and the blocks, including the defective block, which are included in the memory area, are erased. |
