发明名称 |
Lightly doped silicon carbide wafer and use thereof in high power devices |
摘要 |
A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.
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申请公布号 |
US8097524(B2) |
申请公布日期 |
2012.01.17 |
申请号 |
US20090352793 |
申请日期 |
2009.01.13 |
申请人 |
ELLISON ALEXANDRE;MAGNUSSON BJOERN;VEHANEN ASKO;STEPHANI DIETRICH;MITLEHNER HEINZ;FRIEDRICHS PETER;NORSTEL AB;SICED ELECTRONICS DEVELOPMENT GMBH & CO. KG |
发明人 |
ELLISON ALEXANDRE;MAGNUSSON BJOERN;VEHANEN ASKO;STEPHANI DIETRICH;MITLEHNER HEINZ;FRIEDRICHS PETER |
分类号 |
C30B15/14;C30B29/36;C30B25/00;H01L21/04;H01L21/205;H01L21/324;H01L21/336;H01L29/12;H01L29/161;H01L29/24;H01L29/739;H01L29/78 |
主分类号 |
C30B15/14 |
代理机构 |
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