发明名称 NON-VOLATILE MEMORY DEVICE
摘要 <p>PURPOSE: A nonvolatile memory device is provided to prevent the increase of a chip size by arranging a metal line under a bit line. CONSTITUTION: Source selection lines(SSL'), source lines, word lines(WL'), and drain selection lines(DSL') are separated from each other. A plurality of bit lines(BL') are orthogonal to the word line. A metal line is arranged in the same direction as the source line. The metal line is arranged under the bit line.</p>
申请公布号 KR20120005846(A) 申请公布日期 2012.01.17
申请号 KR20100066524 申请日期 2010.07.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, YOUNG SOO
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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