| 摘要 |
PURPOSE: An electro-static discharge protection device for a semiconductor is provided to stably discharge an ESD current by turning on a GGNMOS uniformly when ESD is generated. CONSTITUTION: A common drain line is arranged between an input-output pad and an internal circuit. A common ground voltage line is corresponded to the common drain line. A plurality of GGNMOS transistors are parallel-connected to the common drain line and common ground voltage line. Resistance is serially connected between each GGNMOS transistor and the common ground voltage line. Resistance is respectively differently set.
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