| 摘要 |
<p>PURPOSE: A method for fabricating a semiconductor device is provided to improve the step height between a cell region and a pad region by removing the sacrificing layer of the pad area before etching of the polysilicon layer of the cell region. CONSTITUTION: A hard mask nitride(21) is formed on a substrate(20) including first area and second regions. The hard mask nitride and the substrate are etched to form a trench(24). A polysilicon layer(26A) fills the constant depth of the trench. A liner nitride film(27) is formed along the surface of the buried polysilicon layer and trench. A sacrificing layer(28A) filling in the rest of the trench film is formed on the liner nitride.</p> |
