| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent an error due to a back flow of a voltage level of a data bus to a bit line by using a switch which is turned on at different timing. CONSTITUTION: A bit line sense amplifier(220) amplifies data loaded in a bit line. A plurality of switches(201-204) are serially connected to connect a bit line to a data bus. A plurality of switches are turned on at different timing in a read operation. The switch connected between a transmission node and a bit line is turned on when a first column signal is activated. The switch between the transmission node and the data bus is turned on when a second column selection signal is activated. |
