| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to make a package high capacity and thin by controlling the bending of a semiconductor chip. CONSTITUTION: A semiconductor substrate(100) in which a passivation film preventing a chip area is formed is prepared. The chip area is classified into a cell region and a peripheral region. A fuse and a pad are respectively arranged in the fuse regions(FU) and pad area(PAD) of the peripheral region. A high stress-film(200) is formed in the semiconductor of the substrate. A SWP film(210) is formed on the high stress-film. The SWP film is formed into a PIQ(Polymide Isoindro Quirazorindione) film.
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