发明名称 |
SILICON DEVICE STRUCTURE AND SPUTTERING TARGET MATERIAL USED IN FORMING THE SAME |
摘要 |
PURPOSE: A silicon device structure and a sputtering target material used in forming the same is provided to suppress the diffusion from a Cu-Mn-P alloy to an n·a-Si film by using a Cu-Mn-p alloy. CONSTITUTION: A gate electrode layer(10) is formed on a glass substrates(11). A gate insulating layer(9) is formed on the gate electrode layer. An amorphous silicon(8) is formed on the gate insulating layer. An n·a-Si film(6) is formed on the amorphous silicon. An Si oxide film(5) is formed on the n·a-Si film. A Cu alloy film(4) is formed on the Si oxide film.
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申请公布号 |
KR20120004914(A) |
申请公布日期 |
2012.01.13 |
申请号 |
KR20110025754 |
申请日期 |
2011.03.23 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
TATSUMI NORIYUKI;TONOGI TATSUYA |
分类号 |
H01L21/28;H01L21/203 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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