发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to secure margin of a global input and output line by optimally setting an activation section of a pipe input signal. CONSTITUTION: A column selection signal generating unit(110) receives a read command signal(RD_CMD). The column selection signal generating unit generates a column selection signal with a pulse width of a read command signal or a column selection signal which is extended than the pulse width of the read command signal in response to a bank grouping mode signal. A pipe input signal generating unit(120) receives a column selection signal outputted from the column selection signal generating unit. The pipe input signal generating unit generates a pipe input signal(RD_PIN) with a pulse width of a column selection signal or a pipe input signal which is reduced than the pulse width of the column selection signal.
申请公布号 KR20120004825(A) 申请公布日期 2012.01.13
申请号 KR20100065512 申请日期 2010.07.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HAN, DONG HOON;PARK, KI CHON
分类号 G11C7/10;G11C7/12;G11C7/22;G11C8/12 主分类号 G11C7/10
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