COMPOSITION FOR REMOVING A PHOTORESIST RESIDUE AND CLEANING METHOD USING THE SAME

摘要

PURPOSE: A composition for eliminating photo-resist residues and a washing method using the same are provided to improve the anti-corrosion effect of the composition with respect to tungsten or tungsten alloy formed on a substrate. CONSTITUTION: A composition for eliminating photo-resist residues includes sulfuric acid, hydrogen peroxide, and a hydroxyl group substituted alkylcarboxylic acid compound. A washing method of etching residues includes the following: The composition is applied to a substrate or a semiconductor device structure on which etching residues are remaining. The composition is in contact with the surface of the substrate or the semiconductor device structure to be washed. The hydroxyl group substituted alkylcarboxylic acid compound is represented by chemical formula 1. In the chemical formula 1, the R1 is one or more hydroxyl group substituted C1 to C10 linear or branched alkylene or is one or more hydroxyl group and one or more carboxylic group substituted C1 to C10 linear or branched alkylene. The X is C1 to C10 alkyl group, carboxylic group, or hydrogen.