发明名称 Light emitting device and fabrication method thereof
摘要 <p>Disclosed is a light emitting device including a second conductive semiconductor layer (150); an active layer (140) on the second conductive semiconductor layer; a first semiconductor layer (130) on the active layer, the first semiconductor layer having at least one lateral side with a step portion; and a lateral electrode (180) on the step portion formed at the at least one lateral side of the first semiconductor layer.</p>
申请公布号 KR101103963(B1) 申请公布日期 2012.01.13
申请号 KR20090118082 申请日期 2009.12.01
申请人 发明人
分类号 H01L33/36 主分类号 H01L33/36
代理机构 代理人
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