SEMICONDUCTOR INSULATING FILM COMPOSITION CONTAINING POLYORGANOSILSESQUIOXANE HAVING METHACRYLOXY GROUP OR ACRYLOXY GROUP

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor insulating film composition containing a polyorganosilsesquioxane having a methacryloxy group or an acryloxy group and a method for producing a thin film using the semiconductor insulating film composition, and an insulating film produced by the method and exhibiting resistance against an organic solvent.

SOLUTION: A semiconductor insulating film composition is prepared by adding a vinyl monomer and a polymerization initiator to a polyorganosilsesquioxane having a methacryloxy group or an acryloxy group. After the semiconductor insulating film composition is coated by a spin coating method or the like, radical polymerization of a vinyl group is performed with heating or an ultraviolet irradiation. Subsequently, the semiconductor insulating film composition is compositely cured by condensation polymerization of an alkoxy group to produce a silicone insulating film (polysilsesquioxane film).

COPYRIGHT: (C)2012,JPO&INPIT