| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a storage in which surface oxidation of a memory layer can be suppressed when the memory layer is divided. <P>SOLUTION: On a substrate 2 where a lower electrode 11 is formed, a memory layer material film 13A and an upper electrode material film 12A are formed sequentially. A photoresist film 31 is formed on the upper electrode material film 12. By performing dry etching using the photoresist film 31 as a mask, the upper electrode material film 12A and the memory layer material film 13A are etched in this order thus forming an upper electrode 12 and a memory layer 13 in the shape of a line (linearly). The photoresist film 31 is then peeled off by dry process using inductive coupling plasma or magnetic neutral line discharge plasma. Since the memory layer material film 13A or a memory layer 13 does not touch an etching chemical, surface oxidation of the memory layer 13 can be suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
