| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching method, by which the anisotropy of etching and the etching rate can be increased. <P>SOLUTION: The etching method comprises: a dielectric film formation step including supplying high frequency power to a lower electrode 13 to make plasma of a film formation gas supplied to a grounded vacuum chamber 11, thereby forming a dielectric film I on an inner wall 11b of the vacuum chamber 11, which is executed before loading a substrate S as a processing object into the vacuum chamber 11; and an etching step thereafter executed including supplying high frequency power to the lower electrode 13 provided in the vacuum chamber 11 to make plasma of an etching gas supplied into the vacuum chamber 11 and etching the substrate S loaded into the vacuum chamber 11 using the plasma. <P>COPYRIGHT: (C)2012,JPO&INPIT |
