发明名称 |
PHASE CHANGE MEMORY CELL WITH HEATER AND METHOD THEREFOR |
摘要 |
A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structrure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silicide structure, wherein the heater includes at least a portion of the silicide structure. The phase change structure exhibits a first resistive value when in a first phase state and exhibits a second resistive value when in a second phase state. The silicide structure produces heat when current flows through the silicide structure for changing the phase state of the phase change structure. |
申请公布号 |
US2012007031(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113238791 |
申请日期 |
2011.09.21 |
申请人 |
MATHEW LEO;JAWARANI DHARMESH;MERCHANT TUSHAR P.;MURALIDHAR RAMACHANDRAN;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MATHEW LEO;JAWARANI DHARMESH;MERCHANT TUSHAR P.;MURALIDHAR RAMACHANDRAN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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