| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solar cell having a new material and a new configuration different from the conventional one. <P>SOLUTION: A group III nitride-based solar cell is composed of a first conductive layer of a first conductive type composed of first group III nitride and a second group III nitride semiconductor that is formed on the first conductive layer and has a composition of Al<SB POS="POST">X</SB>Ga<SB POS="POST">Y</SB>In<SB POS="POST">Z</SB>N(0≤X≤1, 0≤Y≤1, 0<Z≤1, X+Y+Z=1), and comprises a photoelectric conversion layer having a periodic superlattice structure and a second conductive layer of a second conductive type that is formed on the photoelectric conversion layer and is composed of third group III nitride. <P>COPYRIGHT: (C)2012,JPO&INPIT |
