| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a variable capacity device which is less affected by self driving of a movable beam, and can widen the voltage range of a bias voltage where the RF capacity changes slowly. <P>SOLUTION: The variable capacity device 1 comprises a support plate 2, a movable beam 3, RF capacity parts C1A, C1B, and drive capacity parts C2A, C2B. The movable beam 3 has a cantilever beam structure where a rectangular thin part 3E is provided on the periphery of a movable end and flexural rigidity is reduced locally. The drive capacity parts C2A, C2B cause flexural deformation of the movable beam 3 by a drive capacity produced by applying a bias voltage. The RF capacity parts C1A, C1B produce an RF capacity having a capacitance which changes according to the area of a region where the support plate 2 and the movable beam 3 are close to each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
