发明名称 |
MASK FOR FORMING INTEGRATED CIRCUIT |
摘要 |
A method of forming an integrated circuit includes providing a buffer layer comprising a dielectric material above a layer of conductive material and providing a layer of mask material above the buffer layer. The mask material comprises amorphous carbon. The method also includes removing a portion of the buffer layer and the layer of mask material to form a mask. A feature is formed in the layer of conductive material according to the mask. |
申请公布号 |
US2012007221(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113241810 |
申请日期 |
2011.09.23 |
申请人 |
HUANG RICHARD J.;BELL SCOTT A.;DAKSHINA-MURTHY SRIKANTESWARA;FISHER PHILIP A.;NGUYEN RICHARD C.;TABERY CYRUS E.;YOU LU;GLOBALFOUNDRIES INC. |
发明人 |
HUANG RICHARD J.;BELL SCOTT A.;DAKSHINA-MURTHY SRIKANTESWARA;FISHER PHILIP A.;NGUYEN RICHARD C.;TABERY CYRUS E.;YOU LU |
分类号 |
H01L29/66;C23F1/00 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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