发明名称 |
NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND SEMICONDUCTOR SYSTEM HAVING THE SAME |
摘要 |
PURPOSE: A non-volatile memory device, a method of operating the same, and a semiconductor system having the same are provided to prevent a data error in reading or verifying by adjusting an operation time of determining the program of a memory or fail. CONSTITUTION: In a non-volatile memory device, a method of operating the same, and a semiconductor system having the same, an operation voltage is supplied to the word line of a selected nonvolatile memory cell. The operation voltage is one of plus or minus. . An operation time is adjusted according to the operation voltage. The threshold voltage of a nonvolatile memory cell is higher or lower than operation voltage is determined by the operation time. |
申请公布号 |
KR20120004026(A) |
申请公布日期 |
2012.01.12 |
申请号 |
KR20100064665 |
申请日期 |
2010.07.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SEUNG BUM |
分类号 |
G11C16/34;G11C16/08;G11C16/14 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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