发明名称 NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND SEMICONDUCTOR SYSTEM HAVING THE SAME
摘要 PURPOSE: A non-volatile memory device, a method of operating the same, and a semiconductor system having the same are provided to prevent a data error in reading or verifying by adjusting an operation time of determining the program of a memory or fail. CONSTITUTION: In a non-volatile memory device, a method of operating the same, and a semiconductor system having the same, an operation voltage is supplied to the word line of a selected nonvolatile memory cell. The operation voltage is one of plus or minus. . An operation time is adjusted according to the operation voltage. The threshold voltage of a nonvolatile memory cell is higher or lower than operation voltage is determined by the operation time.
申请公布号 KR20120004026(A) 申请公布日期 2012.01.12
申请号 KR20100064665 申请日期 2010.07.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SEUNG BUM
分类号 G11C16/34;G11C16/08;G11C16/14 主分类号 G11C16/34
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