发明名称 |
METHOD FOR WRITING IN A MRAM-BASED MEMORY DEVICE WITH REDUCED POWER CONSUMPTION |
摘要 |
A method of writing in a memory device comprising a plurality of MRAM cells, each cell including a magnetic tunnel junction having a resistance that can be varied during a write operation when heated at a high threshold temperature; a plurality of word lines connecting cells along a row; and a plurality of bit lines connecting cells along a column; the method comprising supplying a bit line voltage to one of the bit lines and a word line voltage to one of the word lines for passing a heating current through the magnetic tunnel junction of a selected cell; said word line voltage is a word line overdrive voltage being higher than the core operating voltage of the cells such that the heating current has a magnitude that is high enough for heating the magnetic tunnel junction at the predetermined high threshold temperature. The memory device can be written with low power consumption. |
申请公布号 |
US2012008380(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113155669 |
申请日期 |
2011.06.08 |
申请人 |
EL BARAJI MOURAD;BERGER NEAL;CROCUS TECHNOLOGY SA |
发明人 |
EL BARAJI MOURAD;BERGER NEAL |
分类号 |
G11C11/416 |
主分类号 |
G11C11/416 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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