Annealing Of Amorphous Layers In Si Formed By Ion-Implantation; A Method To Eliminate Residual Defects

摘要

The invention is directed to ion implantation. Ion implantation is a process whereby energetic ions are used to uniformly irradiate the surface of a material—typically a semiconductor wafer. Either atomic or molecular ions are created in an ion source and then extracted for analysis (e.g. by magnetic separation) to ensure the purity of the ion beam. Post-analysis acceleration and scanning of the beam is done prior to sample irradiation. Each dopant-type acts, in general, to increase the conductivity of the silicon.